300mm;two side / chambers; dry in dry out; 2 step polishing; with touch-up platen; 
Polishing head: Wafer diameter 300 mm; Rotating speed 0 - 125 rpm; Backside pressure 0 - 200 kPa; Polishing downforce 300 - 4000 N  
Main polishing tables 1+2: Diameter  900 mm; Rotating speed 0 - 125 rpm;  
Temperature control  20 - 60 °C (Chiller);End Point Detection  Motorcurrent  
Secondary polishing table: Diameter  430 mm; Rotating speed 0 - 125 rpm; Temperature control  20 - 60 °C (Chiller)
Pad conditioner:Down force  0 - 350 N Disc diameter  120 mm Rotating speed  0 - 80 rpm  High pressure conditioning  0 - 100 bar  
SECS II  /  GEM, CIM

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