Chemical Mechanical Planarization Equipment

300mm;two side / chambers; dry in dry out; 2 step polishing; with touch-up platen; 
Polishing head: Wafer diameter 300 mm; Rotating speed 0 - 125 rpm; Backside pressure 0 - 200 kPa; Polishing downforce 300 - 4000 N  
Main polishing tables 1+2: Diameter  900 mm; Rotating speed 0 - 125 rpm;  
Temperature control  20 - 60 °C (Chiller);End Point Detection  Motorcurrent  
Secondary polishing table: Diameter  430 mm; Rotating speed 0 - 125 rpm; Temperature control  20 - 60 °C (Chiller)
Pad conditioner:Down force  0 - 350 N Disc diameter  120 mm Rotating speed  0 - 80 rpm  High pressure conditioning  0 - 100 bar  
SECS II  /  GEM, CIM

200 Wafer Size Single Wafer Polishing; Polish Arm/Wafer Carrier; Load/Unload Station; Primary/Final Polish Table (22.5"/20.625"); Carrier Clean Station; APP1000 Pad Conditioner; Adjustable Parameters: Polish Arm Downforce and Backpressure; Polish Platen Rotational Speed; Polish Platen Temperature; Wafer Carrier Assembly Rotation Speed; Polish Arm Assembly Oscillation Speed and Distance; Slurry Pump Output; APP1000 Pad Profiling; Alarm Band Width, NOVAScan 210 ITM system (inline measuring system) for installation inside the unload water track,

200 Wafer Size Single Wafer Polishing; Polish Arm/Wafer Carrier; Load/Unload Station; Primary/Final Polish Table (22.5"/20.625"); Carrier Clean Station; APP1000 Pad Conditioner; Adjustable Parameters: Polish Arm Downforce and Backpressure; Polish Platen Rotational Speed; Polish Platen Temperature; Wafer Carrier Assembly Rotation Speed; Polish Arm Assembly Oscillation Speed and Distance; Slurry Pump Output; APP1000 Pad Profiling; Alarm Band Width.

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